notes : (1) repetitive ratin g : pulse width limited b y max.junction temperature absolute maximum ratings symbol v ces v ges i c i cm (1) i f i fm p c tj tstg viso characteristics collector-emitter voltage gate-emitter voltage collector current @ tc = 25 & pulsed collector current diode continuous forward current @ tc = 25 & diode maximum forward current maximum power dissipation @tc = 25 & operating junction temperature storage temperature range isolation voltage @ ac 1 min mounting torque @ power terminals screw :m5 mounting screw :m6 rating 600 20 200 400 200 400 830 -40 ~ 150 -40 ~ 125 2500 2.0 2.5 units v v a a a a w & & v n.m n.m package code : 7-pm-ba features 9 high speed switching 9 low conduction loss : v ce (sat) = 2.1 v (typ) 9 fast & soft anti-parallel fwd 9 short circuit rated : min 10us at tc=100 & applications 9 buck(step down) converter e1 g1 c1 e2 c2e1 internal circuit diagram ? 1999 fairchild semiconductor corporation rev.b igbt module SMBH1G200US60 preliminary
characteristics c - e breakdown voltage temperature coeff. of breakdown voltage g - e threshold voltage collector cutoff current g - e leakage current collector to emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn on delay time turn on rise time turn off delay time turn off fall time turn on switching loss turn off switching loss total switching loss short circuit withstand time total gate charge gate-emitter charge gate-collector charge symbol bv ces z v ces/ z t j v ge(th) i ces i ges v ce (sat) cies coes cres td(on) tr td(off) tf eon eoff ets tsc qg qge qgc min 600 - 5 - - - - - - - - - - - - - - 10 - - - typ - 0.6 6 - - 2.1 2.7 20000 1680 520 170 80 440 100 2.0 6.0 8.0 - 890 150 400 max - - 8.5 250 100 2.7 - - - - - - - 250 - - 16 - 1335 - - units v v/ & v ua na v v pf pf pf ns ns ns ns mj mj mj us nc nc nc electrical characteristics (igbt part) (t c =25 & ,unless otherwise specified) test conditions v ge = 0v , i c = 250 v ge = 0v , i c = 1ma i c =200ma , v ce = vge v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v ic=200a, v ge =15v @tc= 25 & ic=200a, v ge =15v @tc=100 & v ge = 0v , f = 1 ( v ce = 30v v cc = 300v , i c = 200a v ge = 15v r g = 3.1 n inductive load vcc = 300v, v ge = 15v @tc = 100 & vcc = 300v v ge = 15v ic = 200a igbt module SMBH1G200US60 preliminary
thermal resistance electrical characteristics (diode part) (t c =25 & ,unless otherwise specified) symbol r ~ jc r ~ jc r ~ cs weight characteristics junction-to-case(igbt part, per 1/2 module) junction-to-case(diode part, per 1/2 module) case-to-sink ( conductive grease applied) weight of module units & /w & /w & /w g typ - - - - max 0.15 0.35 0.13 270 min test conditions i f =200a i f =200a, v r =200v di/dt= -400a/us tc =25 & tc =100 & tc =25 & tc =100 & tc =25 & tc =100 & tc =25 & tc =100 & characteristics diode forward voltage diode reverse recovery time diode peak reverse recovery current diode reverse recovery charge symbol v fm trr irr qrr min - - - - - - - - typ 1.9 1.8 90 130 19 25 855 1625 max 2.8 - 130 - 25 - 1600 - units v ns a nc igbt module SMBH1G200US60 preliminary
0246810 0 100 200 300 400 500 20v 15v 13v 12v 11v v ge = 10v common emitter tc = 25 & collector current ic [a] collector-emitter voltage v ce [v] 012345 0 100 200 300 400 500 125 & tc =25 & common emitter v g e = 15v collector current ic [a] collector- emitter voltage v ce [v] 0 4 8 12 16 20 0 100 200 300 400 500 125 & tc = 25 & common emitter vce = 5v collector current ic [a] gate-emitter voltage v ge [v] 0246810 0 100 200 300 400 500 20 15 13 12 11 v ge = 10v common emitter tc = 125 & collector current ic [a] collector-emitter voltage v ce [v] igbt module SMBH1G200US60 preliminary
0 4 8 121620 0 4 8 12 16 400 200 ic = 80a common emitter tc = 25 & collector-emitter voltage v ce [v] gate-emitter voltage v ge [v] 0 4 8 121620 0 4 8 12 16 400 200 ic =80 a common emitter tc = 125 & collector-emitter voltage v ce [v] gate-emitter voltage v ge [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 5e-4 1e-3 0.01 0.1 1 igbt stage tc = 25 & 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] [ & /w] rectan g ular pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 diode stage tc = 25 & 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] [ & /w] rectangular pulse duration [sec] igbt module SMBH1G200US60 preliminary
01234 0 100 200 300 400 500 125 & tc = 25 & common cathode v g e = 0v forward current i f [a] forward voltage v f [v] 11030 300 1000 10000 40000 cres coes cies common emitter vge = 0v f = 1mhz tc = 25 & capacitance c [pf] collector-emitter voltage v ce [v] 0 50 100 150 200 0 2 4 6 8 10 12 eoff eon esw vcc = 300v rg = 3.1 + tc = 125 & energy [mj] collector - emitter current i c [a] 0 200 400 600 800 0 100 200 300 400 charge q g [nc] collector-emitter voltage v ce [v] 0 2 4 6 8 10 12 14 16 common emitter rl = 1.5 + tc =25 & gate-emitter voltage v ge [v] igbt module SMBH1G200US60 preliminary
0 5 10 15 20 25 30 0 5 10 15 20 25 30 eoff eon esw vcc = 300v ic = 200a energy [mj] gate - emitter resistance rg [ + ] 20 40 60 80 100 120 0 2 4 6 8 10 12 20a 100a ic = 200a vcc = 300v rg = 3.1 + vge = 15v energy [mj] case temperature t c [ & ] 0 50 100 150 200 5 10 40 30 20 : tc = 25 & : tc = 125 & common cathode di/dt = -400a/ irr trr peak reverse recovery current irr [a] reverse recovery time trr [x10ns] forward current i f [a] 10 100 0.05 0.1 1 200 t f t d ( off ) : tc = 25 & : tc = 125 & common emitter vcc = 300v v g e = 15v r g = 3.1 + switching time t d(off) , t f [ ] collector current i c (a) igbt module SMBH1G200US60 preliminary
0.3 1 10 100 1000 0.5 1 10 100 600 300 50 100 1ms dc operation ic max. (continuous) ic max. (pulsed) 30 3 300 30 3 collector current ic [a] collector-emitter voltage v ce [v] 21050 0.05 0.1 1 t f t d(off) : tc = 25 & : tc = 125 & comon emitter vcc = 300v vge = 15v ic = 200a switching time t off , t f [ ] gate resistance r g [ + ] 21050 0.05 0.1 1 t r t d(on) : tc = 25 & : tc = 125 & common emitter vcc = 300v vge = 15v ic = 200a switching time t d(on) , t r [ ] gate resistance r g [ + ] 10 100 0.01 0.1 0.5 200 common emitter vcc = 300v vge = 15v rg = 3.1 + t r t d(on) : tc = 25 & : tc = 125 & switching time t d(on) , t r [ ] collector current i c (a) igbt module SMBH1G200US60 preliminary
% ( ( % & ( &( 1$0( 3/$7( 7$3 7(50,1$/ w = 0 '3 0$; = 02817,1* +2/( 7-pm-ba unit : mm v g e vce ic 90% 10% 90% 10% td(off) tf td(on) tr inductive load test circuit and waveforms +/- 15v r g vcc l 0 100 200 300 400 500 600 700 0 100 200 300 400 500 tj 125 & vge = 15v rg = 3.1 + collector current ic [a] collector-emitter voltage v ce [v] igbt module SMBH1G200US60 preliminary
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